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RAS PresidiumДоклады Российской академии наук. Физика, технические науки Doklady Physics

  • ISSN (Print) 2686-7400
  • ISSN (Online) 3034-5081

Inversion of surface conductivity type in correlated topological insulator SmB

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PII
S3034508125060021-1
DOI
10.7868/S3034508125060021
Publication type
Article
Status
Published
Authors
V.V. Glushkov
  • Affiliation: Prokhorov General Physics Institute of the Russian Academy of Sciences
A.D. Bozhko
  • Affiliation: Prokhorov General Physics Institute of the Russian Academy of Sciences
V.S. Zhurkin
  • Affiliation: Prokhorov General Physics Institute of the Russian Academy of Sciences
V.M. Shevlyuga
  • Affiliation: Prokhorov General Physics Institute of the Russian Academy of Sciences
B.V. Andryushechkin
  • Affiliation: Prokhorov General Physics Institute of the Russian Academy of Sciences
Volume/ Edition
Volume 525 / Issue number 1
Pages
11-20
Abstract
The potential to control the type of surface conductivity in the correlated topological insulator SmB was demonstrated for the first time. The transition to -type surface conductivity with the Hall effect sign inversion at helium temperatures was achieved by cleaning the SmB faces formed by the (110) surfaces with the help of argon ion sputtering with an average energy of 500 eV. The crossover in the surface conductivity type with a dominant contribution from surface holes (having mobility up to 60 cmVs at 2 K) is associated with both the removal of carbon from the surface of SmB and its passivation by oxygen, and with the generation of defects in the near-surface layer initiated by ion bombardment. The discovered effect opens up possibilities for modifying the parameters of surface electron transport in the correlated topological insulator SmB by means of the controlled injection of defects or due to the field effect.
Keywords
топологический изолятор гексаборид самария эффект Холла поверхностная проводимость оже-спектроскопия Array
Date of publication
01.12.2025
Year of publication
2025
Number of purchasers
0
Views
16

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